SSF2318E|苏州硅能半导体科技|SSF2318E厂家

DESCRIPTION

The SSF2318E uses advanced trench technology to provide excellent R0S(ON), low gate charge and operation with gate voltages as low as 2.5V.

GENERAL FEATURES

● VDS = 20V,ID =6.5A

R0S(ON) < 34mΩ @ VGS=1.8V

R0S(ON) < 26mΩ @ VGS=2.5V

R0S(ON) < 22mΩ @ VGS=4.5V

ESD Rating：2000V HBM

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

●Battery protection

●Load switch

●Power management

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

NOTES

1. All dimensi** are in millimeters.

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.

4. Dimension L is measured in gauge plane.

5. Controlling dimension is millimeter, converted inch dimensi** are not necessarily exact.